{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492820","patent":{"patent_number":"US-8492820","title":"Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit","assignee":null,"inventors":[],"filing_date":"2012-02-28T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"Disclosed is an integrated circuit having at least one deep trench isolation structure and a deep trench capacitor. A method of forming the integrated circuit incorporates a single etch process to simultaneously form first trench(s) and a second trenches for the deep trench isolation structure(s) and a deep trench capacitor, respectively. Following formation of a buried capacitor plate adjacent to the lower portion of the second trench, the trenches are lined with a conformal insulator layer and filled with a conductive material. Thus, for the deep trench capacitor, the conformal insulator layer functions as the capacitor dielectric and the conductive material as a capacitor plate in addition to the buried capacitor plate. A shallow trench isolation (STI) structure formed in the substrate extending across the top of the first trench(es) encapsulates the conductive material therein, thereby creating the deep trench isolation structure(s)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit","description":"Disclosed is an integrated circuit having at least one deep trench isolation structure and a deep trench capacitor. A method of forming the integrated circuit incorporates a single etch process to sim","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492820","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492820","citation_suggestion":"Patentable. \"Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit\" (US-8492820). https://patentable.app/patents/US-8492820","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492820","json":"https://patentable.app/api/llm-context/US-8492820","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:58.828Z"}