{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492825","patent":{"patent_number":"US-8492825","title":"Nonvolatile semiconductor memory device and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2011-03-17T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"According to one embodiment, a semiconductor memory device includes each of memory cells including a floating electrode above a semiconductor substrate via the gate insulator, a control gate electrode above the floating gate electrode via a first inter-gate insulator, first diffusion layers as source or drain, a contact electrode portion including a bottom electrode with an opening and a top electrode on the bottom electrode, the bottom electrode being arranged on the first gate insulator having the opening, the top electrode being electrically connected to the semiconductor substrate via the first opening, and a connection diffusion layer formed in the semiconductor substrate below the first opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile semiconductor memory device and method of fabricating the same","description":"According to one embodiment, a semiconductor memory device includes each of memory cells including a floating electrode above a semiconductor substrate via the gate insulator, a control gate electrode","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492825","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492825","citation_suggestion":"Patentable. \"Nonvolatile semiconductor memory device and method of fabricating the same\" (US-8492825). https://patentable.app/patents/US-8492825","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492825","json":"https://patentable.app/api/llm-context/US-8492825","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:03.681Z"}