{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492830","patent":{"patent_number":"US-8492830","title":"Multiple channel fin-FET and its manufacturing method","assignee":null,"inventors":[],"filing_date":"2011-09-19T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"According to one embodiment, a semiconductor memory device includes a semiconductor substrate having a gate groove and first to third grooves, the first to third grooves being formed on a bottom surface of the gate groove and the third groove being formed between the first and second grooves, and a gate electrode having a first gate portion formed in the first groove, a second gate portion formed in the second groove, a third gate portion formed in the third groove, and a fourth gate portion formed in the gate groove. A cell transistor having the gate electrode has a first channel region formed in the semiconductor substrate between the first and third gate portions and a second channel region formed in the semiconductor substrate between the second and third gate portions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multiple channel fin-FET and its manufacturing method","description":"According to one embodiment, a semiconductor memory device includes a semiconductor substrate having a gate groove and first to third grooves, the first to third grooves being formed on a bottom surfa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492830","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492830","citation_suggestion":"Patentable. \"Multiple channel fin-FET and its manufacturing method\" (US-8492830). https://patentable.app/patents/US-8492830","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492830","json":"https://patentable.app/api/llm-context/US-8492830","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:07:21.738Z"}