{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492841","patent":{"patent_number":"US-8492841","title":"Trench-generated transistor structures, device structures, and design structures","assignee":null,"inventors":[],"filing_date":"2012-01-16T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Trench-generated transistor structures, design structures for a trench-generated transistor, and other trench-generated device structures. The source and drain of the transistor are defined by doped regions in the semiconductor material of the handle substrate of a semiconductor-on-insulator (SOI) wafer. The gate electrode may be defined from the semiconductor layer of the SOI wafer, which is separated from the handle wafer by an insulating layer. Alternatively, the gate electrode may be defined as a conventional gate stack on a shallow trench isolation region in the semiconductor layer or as a conventional gate stack in one of the BEOL interconnect levels."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench-generated transistor structures, device structures, and design structures","description":"Trench-generated transistor structures, design structures for a trench-generated transistor, and other trench-generated device structures. The source and drain of the transistor are defined by doped r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492841","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492841","citation_suggestion":"Patentable. \"Trench-generated transistor structures, device structures, and design structures\" (US-8492841). https://patentable.app/patents/US-8492841","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492841","json":"https://patentable.app/api/llm-context/US-8492841","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:28:58.964Z"}