{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492875","patent":{"patent_number":"US-8492875","title":"Nonvolatile memory element having a tantalum oxide variable resistance layer","assignee":null,"inventors":[],"filing_date":"2012-05-30T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0 <x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes is in the low-resistance state is RL, a resistance value between the electrodes is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting a first terminal to a second terminal via the first electrode, the variable resistance layer and the second electrode, is R0, R0 satisfies RL <R0."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory element having a tantalum oxide variable resistance layer","description":"A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492875","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492875","citation_suggestion":"Patentable. \"Nonvolatile memory element having a tantalum oxide variable resistance layer\" (US-8492875). https://patentable.app/patents/US-8492875","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492875","json":"https://patentable.app/api/llm-context/US-8492875","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:51:22.947Z"}