{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8492903","patent":{"patent_number":"US-8492903","title":"Through silicon via direct FET signal gating","assignee":null,"inventors":[],"filing_date":"2011-06-29T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A system comprises a first integrated circuit (IC) chip that includes a first electronic component; a second IC chip that includes a second electronic component; a through silicon via (TSV) in the second IC chip that electrically couples the first electronic component to the second electronic component; and a signal gating transistor that fully occludes the TSV."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Through silicon via direct FET signal gating","description":"A system comprises a first integrated circuit (IC) chip that includes a first electronic component; a second IC chip that includes a second electronic component; a through silicon via (TSV) in the sec","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8492903","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8492903","citation_suggestion":"Patentable. \"Through silicon via direct FET signal gating\" (US-8492903). https://patentable.app/patents/US-8492903","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8492903","json":"https://patentable.app/api/llm-context/US-8492903","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:56:16.555Z"}