{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8493794","patent":{"patent_number":"US-8493794","title":"Non-volatile memory cell and methods for programming, erasing and reading thereof","assignee":null,"inventors":[],"filing_date":"2011-07-15T00:00:00.000Z","publication_date":"2013-07-23T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":12,"abstract":"A non-volatile memory cell and methods for programming, erasing and reading thereof are provided. A non-volatile memory cell includes a well region having a first conductive type. A first transistor and a second transistor having a second conductive type are disposed on the well region, wherein a first gate of the first transistor is coupled to a second gate of the second transistor. The first transistor and the second transistor share a drain region, coupling to a bit line. A first source region of the first transistor and a second region of the second transistor are coupled to a first select line and a second line, respectively. A bit is stored in the first and second gates by controlling the first select line and the second line. A bit stored in the first and second gates is erased by controlling the first select line or the second line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory cell and methods for programming, erasing and reading thereof","description":"A non-volatile memory cell and methods for programming, erasing and reading thereof are provided. A non-volatile memory cell includes a well region having a first conductive type. A first transistor a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8493794","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8493794","citation_suggestion":"Patentable. \"Non-volatile memory cell and methods for programming, erasing and reading thereof\" (US-8493794). https://patentable.app/patents/US-8493794","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8493794","json":"https://patentable.app/api/llm-context/US-8493794","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:38:13.972Z"}