{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497144","patent":{"patent_number":"US-8497144","title":"Method for manufacturing light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure","assignee":null,"inventors":[],"filing_date":"2013-03-06T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["B82Y","B82Y","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":8,"abstract":"A method for manufacturing a light emitting chip comprises: providing a substrate with a catalyst layer formed thereon, the catalyst layer being etched to form a number of patterns which are spaced from each other by multiple gaps; forming a buffer layer in the multiple gaps of the patterned catalyst layer, the buffer layer comprising a patterned carbon nano tube structure formed along an extending direction of the substrate, the carbon nano tube structure being comprised of nitride semiconductor; removing the catalyst layer from the substrate; growing a cap layer from the substrate to cover the buffer layer; and growing a light emitting structure from a top of the cap layer, the light emitting structure sequentially comprising a first cladding layer, a light emitting layer, and a second cladding layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure","description":"A method for manufacturing a light emitting chip comprises: providing a substrate with a catalyst layer formed thereon, the catalyst layer being etched to form a number of patterns which are spaced fr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497144","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497144","citation_suggestion":"Patentable. \"Method for manufacturing light emitting chip having buffer layer with nitride semiconductor in carbon nano tube structure\" (US-8497144). https://patentable.app/patents/US-8497144","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497144","json":"https://patentable.app/api/llm-context/US-8497144","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:23:27.244Z"}