{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497184","patent":{"patent_number":"US-8497184","title":"Method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2010-08-05T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"In one embodiment, a method for manufacturing a semiconductor device includes forming a first conductor layer on a surface of a semiconductor layer via a tunnel insulating film. The method includes forming an isolation trench extending from a surface of the first conductor layer to the semiconductor layer to form a plurality of conductive plates on the tunnel insulating film. The method includes filling the isolation trench with an element insulation insulating film from bottom of the isolation trench to an intermediate portion of a side surface of each of the conductive plates. The method includes forming a silicon nitride film on an exposed surface of the each of the conductive plates not covered with the element insulation insulating film. In addition, the method includes filling an upper portion of the isolation trench by forming a second conductor layer above the conductive plates and the element insulation insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing semiconductor device","description":"In one embodiment, a method for manufacturing a semiconductor device includes forming a first conductor layer on a surface of a semiconductor layer via a tunnel insulating film. The method includes fo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497184","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497184","citation_suggestion":"Patentable. \"Method for manufacturing semiconductor device\" (US-8497184). https://patentable.app/patents/US-8497184","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497184","json":"https://patentable.app/api/llm-context/US-8497184","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:23:42.967Z"}