{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497188","patent":{"patent_number":"US-8497188","title":"Method for producing bonded wafer","assignee":null,"inventors":[],"filing_date":"2010-04-30T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate (3) from a surface thereof to form an ion-implanted interface (5); bonding a handle substrate (7) with a thermal expansion coefficient higher than that of the donor substrate (3) onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly (1), and delaminating the donor substrate (3) of the assembly (1) at the ion-implanted interface wherein the assembly (1) has been cooled to a temperature not greater than room temperature by a cooling apparatus (20), so that a donor film is transferred onto the handle substrate (7)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing bonded wafer","description":"When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497188","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497188","citation_suggestion":"Patentable. \"Method for producing bonded wafer\" (US-8497188). https://patentable.app/patents/US-8497188","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497188","json":"https://patentable.app/api/llm-context/US-8497188","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:54:31.299Z"}