{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497205","patent":{"patent_number":"US-8497205","title":"Semiconductor device manufacturing method, wiring and semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-12-29T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":18,"abstract":"In an embodiment of the present invention, a semiconductor layer having regions into which a p-type impurity, an n-type impurity and a (p+n) impurity are respectively introduced is formed as a surface layer by being heat-treated. An impurity segregation layer on these regions is removed, and a film of a metallic material is thereafter formed on the regions and is heat-treated, thereby forming a silicide film on the semiconductor layer. In another embodiment, an impurity is introduced into the impurity segregation layer, and a film of a metallic material is thereafter formed on the impurity segregation layer and is heat-treated to form a silicide film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method, wiring and semiconductor device","description":"In an embodiment of the present invention, a semiconductor layer having regions into which a p-type impurity, an n-type impurity and a (p+n) impurity are respectively introduced is formed as a surface","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497205","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497205","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method, wiring and semiconductor device\" (US-8497205). https://patentable.app/patents/US-8497205","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497205","json":"https://patentable.app/api/llm-context/US-8497205","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:36:46.690Z"}