{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497218","patent":{"patent_number":"US-8497218","title":"Silicon carbide semiconductor device and method for producing the same","assignee":null,"inventors":[],"filing_date":"2011-11-17T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method for producing the same","description":"A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497218","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497218","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method for producing the same\" (US-8497218). https://patentable.app/patents/US-8497218","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497218","json":"https://patentable.app/api/llm-context/US-8497218","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:08:23.159Z"}