{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497528","patent":{"patent_number":"US-8497528","title":"Method for fabricating a strained structure","assignee":null,"inventors":[],"filing_date":"2010-05-06T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A structure for a field effect transistor on a substrate that includes a gate stack, an isolation structure and a source/drain (S/D) recess cavity below the top surface of the substrate disposed between the gate stack and the isolation structure. The recess cavity having a lower portion and an upper portion. The lower portion having a first strained layer and a first dielectric film. The first strained layer disposed between the isolation structure and the first dielectric film. A thickness of the first dielectric film less than a thickness of the first strained layer. The upper portion having a second strained layer overlying the first strained layer and first dielectric film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a strained structure","description":"A structure for a field effect transistor on a substrate that includes a gate stack, an isolation structure and a source/drain (S/D) recess cavity below the top surface of the substrate disposed betwe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497528","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497528","citation_suggestion":"Patentable. \"Method for fabricating a strained structure\" (US-8497528). https://patentable.app/patents/US-8497528","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497528","json":"https://patentable.app/api/llm-context/US-8497528","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:53.035Z"}