{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497529","patent":{"patent_number":"US-8497529","title":"Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits","assignee":null,"inventors":[],"filing_date":"2009-09-02T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"Trench-generated device structures fabricated using a semiconductor-on-insulator (SOI) wafer, design structures embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, as well as methods for fabricating trench-generated device structures. The device structure includes a trench extending through the semiconductor and insulator layers of the SOI wafer and into the underlying semiconductor substrate, and a first doped region in the semiconductor substrate. The doped region, which extends about the trench, has a second conductivity type opposite to the first conductivity type. The device structure further includes a first contact extending from the top surface through the semiconductor and insulator layers to a portion of the semiconductor substrate outside of the doped region, and a second contact extending from the top surface through the semiconductor and insulator layers to the doped region in the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits","description":"Trench-generated device structures fabricated using a semiconductor-on-insulator (SOI) wafer, design structures embodied in a machine readable medium for designing, manufacturing, or testing an integr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497529","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497529","citation_suggestion":"Patentable. \"Trench generated device structures and design structures for radiofrequency and BiCMOS integrated circuits\" (US-8497529). https://patentable.app/patents/US-8497529","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497529","json":"https://patentable.app/api/llm-context/US-8497529","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:03.744Z"}