{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497537","patent":{"patent_number":"US-8497537","title":"Semiconductor device with ferro-electric capacitor","assignee":null,"inventors":[],"filing_date":"2008-05-28T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with ferro-electric capacitor","description":"A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497537","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497537","citation_suggestion":"Patentable. \"Semiconductor device with ferro-electric capacitor\" (US-8497537). https://patentable.app/patents/US-8497537","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497537","json":"https://patentable.app/api/llm-context/US-8497537","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:58:36.823Z"}