{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497554","patent":{"patent_number":"US-8497554","title":"Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide","assignee":null,"inventors":[],"filing_date":"2010-11-09T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"In a replacement gate approach for forming high-k metal gate electrode structures, electronic fuses may be provided on the basis of a semiconductor material in combination with a metal silicide by using a recessed surface topography and/or a superior selectivity of the metal silicide material during the replacement gate process. For example, in some illustrative embodiments, electronic fuses may be provided in a recessed portion of an isolation region, thereby avoiding the removal of the semiconductor material when replacing the semiconductor material of the gate electrode structures with a metal-containing electrode material. Consequently, the concept of well-established semiconductor-based electronic fuses may be applied together with sophisticated replacement gate structures of transistors."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide","description":"In a replacement gate approach for forming high-k metal gate electrode structures, electronic fuses may be provided on the basis of a semiconductor material in combination with a metal silicide by usi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497554","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497554","citation_suggestion":"Patentable. \"Semiconductor device comprising metal gate structures formed by a replacement gate approach and efuses including a silicide\" (US-8497554). https://patentable.app/patents/US-8497554","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497554","json":"https://patentable.app/api/llm-context/US-8497554","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:13.944Z"}