{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8497564","patent":{"patent_number":"US-8497564","title":"Method for fabricating a decoupling composite capacitor in a wafer and related structure","assignee":null,"inventors":[],"filing_date":"2009-08-13T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"According to an exemplary embodiment, a method for fabricating a decoupling composite capacitor in a wafer that includes a dielectric region overlying a substrate includes forming a through-wafer via in the dielectric region and the substrate. The through-wafer via includes a through-wafer via insulator covering a sidewall and a bottom of a through-wafer via opening and a through-wafer via conductor covering the through-wafer via insulator. The method further includes thinning the substrate, forming a substrate backside insulator, forming an opening in the substrate backside insulator to expose the through-wafer via conductor, and forming a backside conductor on the through-wafer via conductor, such that the substrate backside conductor extends over the substrate backside insulator, thereby forming the decoupling composite capacitor. The substrate forms a first decoupling composite capacitor electrode and the through-wafer via conductor and substrate backside conductor form a second decoupling composite capacitor electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a decoupling composite capacitor in a wafer and related structure","description":"According to an exemplary embodiment, a method for fabricating a decoupling composite capacitor in a wafer that includes a dielectric region overlying a substrate includes forming a through-wafer via ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8497564","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8497564","citation_suggestion":"Patentable. \"Method for fabricating a decoupling composite capacitor in a wafer and related structure\" (US-8497564). https://patentable.app/patents/US-8497564","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8497564","json":"https://patentable.app/api/llm-context/US-8497564","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:33:04.420Z"}