{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8498141","patent":{"patent_number":"US-8498141","title":"Non-volatile semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2011-03-18T00:00:00.000Z","publication_date":"2013-07-30T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":18,"abstract":"A memory cell array includes a memory cell having a variable resistance element and disposed between first and second wirings. A control circuit provides a selected first wiring with a first voltage and provide a selected second wiring with a second voltage having a lower voltage value than the first voltage. A current limitation circuit controls a cell current below a first current. It includes a first current generation circuit for storing a cell current at a first point of time and generating a first current of α times the stored cell current. It also includes a second current generation circuit for generating a second current of (β/α) times the cell current at a second point of time. A determination circuit outputs a control signal when the second current exceeds the stored current. The first current generation circuit newly stores a stored current according to the control signal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile semiconductor memory device","description":"A memory cell array includes a memory cell having a variable resistance element and disposed between first and second wirings. A control circuit provides a selected first wiring with a first voltage a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8498141","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8498141","citation_suggestion":"Patentable. \"Non-volatile semiconductor memory device\" (US-8498141). https://patentable.app/patents/US-8498141","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8498141","json":"https://patentable.app/api/llm-context/US-8498141","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:57:32.703Z"}