{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501549","patent":{"patent_number":"US-8501549","title":"Method of manufacturing a reverse blocking insulated gate bipolar transistor","assignee":null,"inventors":[],"filing_date":"2012-06-29T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":7,"abstract":"A method of manufacturing a reverse blocking insulated gate bipolar transistor to form an isolation layer for bending and extending a pn junction, which exhibits a high reverse withstand voltage, to the front surface side. This ensures a high withstand voltage in the reversed direction and reduces leakage current in the reversely biased condition. Formation of a tapered groove by an anisotropic alkali etching process is conducted, resulting in a semiconductor substrate left with a thickness of at least 60 μm between one principal surface and the bottom surface of the tapered groove formed from the other principal surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a reverse blocking insulated gate bipolar transistor","description":"A method of manufacturing a reverse blocking insulated gate bipolar transistor to form an isolation layer for bending and extending a pn junction, which exhibits a high reverse withstand voltage, to t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501549","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501549","citation_suggestion":"Patentable. \"Method of manufacturing a reverse blocking insulated gate bipolar transistor\" (US-8501549). https://patentable.app/patents/US-8501549","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501549","json":"https://patentable.app/api/llm-context/US-8501549","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:10:45.787Z"}