{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501562","patent":{"patent_number":"US-8501562","title":"Fabricating a gate oxide","assignee":null,"inventors":[],"filing_date":"2010-03-05T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"An example of a method of fabricating a gate oxide of a floating gate transistor includes forming a plurality of shallow trench isolation (STI) regions in a silicon wafer. The method also includes selectively filling the STI regions with oxide. Further, the method includes forming sacrificial oxide regions on the silicon wafer. Furthermore, the method includes forming implant regions in the silicon wafer. In addition, the method includes selectively removing the sacrificial oxide regions. The method further includes forming the gate oxide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabricating a gate oxide","description":"An example of a method of fabricating a gate oxide of a floating gate transistor includes forming a plurality of shallow trench isolation (STI) regions in a silicon wafer. The method also includes sel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501562","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501562","citation_suggestion":"Patentable. \"Fabricating a gate oxide\" (US-8501562). https://patentable.app/patents/US-8501562","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501562","json":"https://patentable.app/api/llm-context/US-8501562","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:11:43.921Z"}