{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501574","patent":{"patent_number":"US-8501574","title":"Resistive memory device and manufacturing method thereof and operating method thereof","assignee":null,"inventors":[],"filing_date":"2009-10-07T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":25,"abstract":"A method of manufacturing resistive memory includes the steps: forming a first implanted stacked structure having a first impurity diffusion layer, a second impurity diffusion layer, and a third impurity diffusion layer in a substrate; etching at least the first implanted stacked structure to form a plurality of second implanted stacked structures, wherein the first impurity diffusion layers are first signal lines; forming a plurality of first insulating layers between the second implanted stacked structures; etching the second implanted stacked structures to form a plurality of third implanted stacked structures, wherein the first signal lines are not etched; forming a plurality of second insulating layers between the third implanted stacked structures; forming a plurality of memory material layers electrically coupled to the third impurity diffusion layers; and forming a plurality of second signal lines perpendicular to the first signal lines and electrically coupled to the memory material layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive memory device and manufacturing method thereof and operating method thereof","description":"A method of manufacturing resistive memory includes the steps: forming a first implanted stacked structure having a first impurity diffusion layer, a second impurity diffusion layer, and a third impur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501574","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501574","citation_suggestion":"Patentable. \"Resistive memory device and manufacturing method thereof and operating method thereof\" (US-8501574). https://patentable.app/patents/US-8501574","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501574","json":"https://patentable.app/api/llm-context/US-8501574","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:35.767Z"}