{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501577","patent":{"patent_number":"US-8501577","title":"Preparation method for full-isolated SOI with hybrid crystal orientations","assignee":null,"inventors":[],"filing_date":"2012-05-16T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":10,"abstract":"A preparation method for a full-isolated silicon on insulator (SOI) substrate with hybrid crystal orientations and a preparation method of a complementary metal oxide semiconductor (CMOS) integrated circuit (IC) based on the method are disclosed. In the preparation method for the full-isolated SOI substrate with hybrid crystal orientations provided in the present invention, a SiGe layer is adopted to serve as an epitaxial virtual substrate layer with a first crystal orientation, so as to form a strained top silicon with the first crystal orientation; a polysilicon supporting material is adopted to serve as a support for connecting the top silicon with the first crystal orientation and a top silicon with a second crystal orientation, so that the SiGe layer below the strained top silicon with the first crystal orientation may be removed, and an insulating material is filled to form an insulating buried layer. The top silicon and the insulating buried layer formed in the method have uniform and controllable thickness, the strained silicon formed in the window and the top silicon outside the window have different crystal orientations, so as to provide higher mobility for the NMOS and the PMOS respectively, thereby improving the performance of the CMOS IC."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Preparation method for full-isolated SOI with hybrid crystal orientations","description":"A preparation method for a full-isolated silicon on insulator (SOI) substrate with hybrid crystal orientations and a preparation method of a complementary metal oxide semiconductor (CMOS) integrated c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501577","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501577","citation_suggestion":"Patentable. \"Preparation method for full-isolated SOI with hybrid crystal orientations\" (US-8501577). https://patentable.app/patents/US-8501577","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501577","json":"https://patentable.app/api/llm-context/US-8501577","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:20:35.482Z"}