{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501580","patent":{"patent_number":"US-8501580","title":"Process of fabricating semiconductor device with low capacitance for high-frequency circuit protection","assignee":null,"inventors":[],"filing_date":"2011-02-28T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"A process for fabricating a semiconductor device includes depositing n-type dopant on a p-type substrate, implanting n-type material into the substrate, and growing an n-type epitaxial layer atop the n+ layer. Trenches surrounding the device region are formed and an n+ layer on the sidewalls of the trenches is formed. The trenches are filled by growing a layer of thermal oxide on the sidewalls of the trenches and deposition of plasma enhanced oxide or polysilicon into the trenches, and planarizing the top surface. n+ region of the device is formed by forming an oxide layer on the top surface of the device layer and etching the oxide, depositing n-type dopant material and driving in by high temperature diffusion. p+ region of the device is formed by etching the oxide, depositing p-type dopant material and driving in by high temperature diffusion so that the breakdown voltage is set for circuit protection."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Process of fabricating semiconductor device with low capacitance for high-frequency circuit protection","description":"A process for fabricating a semiconductor device includes depositing n-type dopant on a p-type substrate, implanting n-type material into the substrate, and growing an n-type epitaxial layer atop the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501580","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501580","citation_suggestion":"Patentable. \"Process of fabricating semiconductor device with low capacitance for high-frequency circuit protection\" (US-8501580). https://patentable.app/patents/US-8501580","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501580","json":"https://patentable.app/api/llm-context/US-8501580","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:33:42.366Z"}