{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501594","patent":{"patent_number":"US-8501594","title":"Methods for forming silicon germanium layers","assignee":null,"inventors":[],"filing_date":"2010-06-15T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a first layer comprising silicon and germanium (e.g., a seed layer) atop the substrate using a first precursor comprising silicon and chlorine; and depositing a second layer comprising silicon and germanium (e.g., a bulk layer) atop the silicon germanium seed layer using a second precursor comprising silicon and hydrogen. In some embodiments, the first silicon precursor gas may comprise at least one of dichlorosilane (H2SiCl2), trichlorosilane (HSiCl3), or silicon tetrachloride (SiCl4). In some embodiments, the second silicon precursor gas may comprise at least one of silane (SiH4), or disilane (Si2H6)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming silicon germanium layers","description":"Embodiments of methods for depositing silicon germanium (SiGe) layers on a substrate are disclosed herein. In some embodiments, the method may include depositing a first layer comprising silicon and g","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501594","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501594","citation_suggestion":"Patentable. \"Methods for forming silicon germanium layers\" (US-8501594). https://patentable.app/patents/US-8501594","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501594","json":"https://patentable.app/api/llm-context/US-8501594","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:56:35.155Z"}