{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501603","patent":{"patent_number":"US-8501603","title":"Method for fabricating high voltage transistor","assignee":null,"inventors":[],"filing_date":"2011-06-15T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":12,"abstract":"A method for fabricating a high voltage transistor includes the following steps. Firstly, a substrate is provided. A first sacrificial oxide layer and a hard mask layer are sequentially formed over the substrate. The hard mask layer is removed, thereby exposing the first sacrificial oxide layer. Then, a second sacrificial oxide layer is formed on the first sacrificial oxide layer. Afterwards, an ion-implanting process is performed to introduce a dopant into the substrate through the second sacrificial oxide layer and the first sacrificial oxide layer, thereby producing a high voltage first-type field region of the high voltage transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating high voltage transistor","description":"A method for fabricating a high voltage transistor includes the following steps. Firstly, a substrate is provided. A first sacrificial oxide layer and a hard mask layer are sequentially formed over th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501603","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501603","citation_suggestion":"Patentable. \"Method for fabricating high voltage transistor\" (US-8501603). https://patentable.app/patents/US-8501603","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501603","json":"https://patentable.app/api/llm-context/US-8501603","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:14:39.232Z"}