{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501611","patent":{"patent_number":"US-8501611","title":"Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls","assignee":null,"inventors":[],"filing_date":"2012-07-17T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"Methods of forming integrated circuit devices include forming an electrically conductive layer containing silicon on a substrate and forming a mask pattern on the electrically conductive layer. The electrically conductive layer is selectively etched to define a first sidewall thereon, using the mask pattern as an etching mask. The first sidewall of the electrically conductive layer may be exposed to a nitrogen plasma to thereby form a first silicon nitride layer on the first sidewall. The electrically conductive layer is then selectively etched again to expose a second sidewall thereon that is free of the first silicon nitride layer. The mask pattern may be used again as an etching mask during this second step of selectively etching the electrically conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls","description":"Methods of forming integrated circuit devices include forming an electrically conductive layer containing silicon on a substrate and forming a mask pattern on the electrically conductive layer. The el","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501611","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501611","citation_suggestion":"Patentable. \"Methods of forming integrated circuit devices having electrically conductive layers therein with partially nitridated sidewalls\" (US-8501611). https://patentable.app/patents/US-8501611","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501611","json":"https://patentable.app/api/llm-context/US-8501611","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:04.456Z"}