{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8501626","patent":{"patent_number":"US-8501626","title":"Methods for high temperature etching a high-K material gate structure","assignee":null,"inventors":[],"filing_date":"2008-06-25T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for high temperature etching a high-K material gate structure","description":"Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8501626","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8501626","citation_suggestion":"Patentable. \"Methods for high temperature etching a high-K material gate structure\" (US-8501626). https://patentable.app/patents/US-8501626","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8501626","json":"https://patentable.app/api/llm-context/US-8501626","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:03:00.917Z"}