{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502236","patent":{"patent_number":"US-8502236","title":"Insulated gate field effect transistor","assignee":null,"inventors":[],"filing_date":"2010-03-23T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":5,"abstract":"A MOSFET, which is capable of reducing on resistance by reducing channel mobility even when a gate voltage is high, includes: an n type substrate made of SiC and having a main surface with an off angle of 50°-65° relative to a {0001} plane; an n type reverse breakdown voltage holding layer made of SiC and formed on the main surface of the substrate; a p type well region formed in the reverse breakdown voltage holding layer distant away from a first main surface thereof; a gate oxide film formed on the well region; an n type contact region disposed between the well region and the gate oxide film; a channel region connecting the n type contact region and the reverse breakdown voltage holding layer; and a gate electrode disposed on the gate oxide film. In a region including an interface between the channel region and the gate oxide film, a high-concentration nitrogen region is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Insulated gate field effect transistor","description":"A MOSFET, which is capable of reducing on resistance by reducing channel mobility even when a gate voltage is high, includes: an n type substrate made of SiC and having a main surface with an off angl","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502236","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502236","citation_suggestion":"Patentable. \"Insulated gate field effect transistor\" (US-8502236). https://patentable.app/patents/US-8502236","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502236","json":"https://patentable.app/api/llm-context/US-8502236","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:46:47.920Z"}