{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502291","patent":{"patent_number":"US-8502291","title":"Memory cells, memory cell constructions, and memory cell programming methods","assignee":null,"inventors":[],"filing_date":"2011-04-20T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":14,"abstract":"Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the second conductive material. A resistance of the memory component is configurable via a current conducted from the first conductive material through the oxide material to the second conductive material. Other embodiments include a diode comprising metal and a dielectric material and a memory component connected in series with the diode. The memory component includes a magnetoresistive material and has a resistance that is changeable via a current conducted through the diode and the magnetoresistive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cells, memory cell constructions, and memory cell programming methods","description":"Some embodiments include memory cells including a memory component having a first conductive material, a second conductive material, and an oxide material between the first conductive material and the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502291","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502291","citation_suggestion":"Patentable. \"Memory cells, memory cell constructions, and memory cell programming methods\" (US-8502291). https://patentable.app/patents/US-8502291","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502291","json":"https://patentable.app/api/llm-context/US-8502291","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T20:33:32.010Z"}