{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502300","patent":{"patent_number":"US-8502300","title":"Non-volatile semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2011-09-14T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":14,"abstract":"An dielectric film is formed above the semiconductor substrate. A first conductive layer is formed in the dielectric film and extending in a first direction. The first conductive layer is connected to a first select transistor. A second conductive layer formed in the dielectric film and extending in the first direction. The second conductive layer is connected to a second select transistor. A semiconductor layer is connected to both the first and second conductive layers and functioning as a channel layer of a memory transistor. A gate-insulating film is formed on the semiconductor layer. The gate-insulating film includes a charge accumulation film as a portion thereof. A third conductive layer is surrounded by the gate-insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile semiconductor memory device","description":"An dielectric film is formed above the semiconductor substrate. A first conductive layer is formed in the dielectric film and extending in a first direction. The first conductive layer is connected to","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502300","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502300","citation_suggestion":"Patentable. \"Non-volatile semiconductor memory device\" (US-8502300). https://patentable.app/patents/US-8502300","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502300","json":"https://patentable.app/api/llm-context/US-8502300","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:15:53.784Z"}