{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502310","patent":{"patent_number":"US-8502310","title":"III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer","assignee":null,"inventors":[],"filing_date":"2009-10-20T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminate 11 includes a substrate 13 and a III nitride semiconductor epitaxial film 15. The substrate 13 is made of a III nitride semiconductor having a carrier concentration of more than 1×1018 cm−3. The epitaxial structure 15 includes a III nitride semiconductor epitaxial film 17. A first face 13a of the substrate 13 is inclined at an angle θ of more than 5 degrees with respect to an axis Cx extending in a direction of the c-axis. A normal vector VN and a c-axis vector VC make the angle θ. The III nitride semiconductor epitaxial film 17 includes first, second and third regions 17a, 17b and 17c arranged in order in a direction of a normal to the first face 13a. A dislocation density of the third region 17c is smaller than that of the first region 17a. A dislocation density of the second region 17b is smaller than that of the substrate 13. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer","description":"Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminate 11 includes a substrate 13 and a III nitride semiconductor epitaxial film 1","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502310","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502310","citation_suggestion":"Patentable. \"III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial wafer\" (US-8502310). https://patentable.app/patents/US-8502310","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502310","json":"https://patentable.app/api/llm-context/US-8502310","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:15:17.975Z"}