{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502316","patent":{"patent_number":"US-8502316","title":"Self-aligned two-step STI formation through dummy poly removal","assignee":null,"inventors":[],"filing_date":"2010-02-11T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"An integrated circuit structure includes a semiconductor substrate including an active region. A first shallow trench isolation (STI) region adjoins a first side of the active region. A gate electrode of a MOS device is over the active region and the first STI region. A source/drain stressor region of the MOS device includes a portion in the semiconductor substrate and adjacent the gate electrode. A trench is formed in the semiconductor substrate and adjoining a second side of the active region. The trench has a bottom no lower than a bottom of the source/drain region. An inter-layer dielectric (ILD) extends from over the gate electrode to inside the trench, wherein a portion of the ILD in the trench forms a second STI region. The second STI region and the source/drain stressor region are separated from each other by, and adjoining, a portion of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned two-step STI formation through dummy poly removal","description":"An integrated circuit structure includes a semiconductor substrate including an active region. A first shallow trench isolation (STI) region adjoins a first side of the active region. A gate electrode","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502316","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502316","citation_suggestion":"Patentable. \"Self-aligned two-step STI formation through dummy poly removal\" (US-8502316). https://patentable.app/patents/US-8502316","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502316","json":"https://patentable.app/api/llm-context/US-8502316","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:18:15.699Z"}