{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502321","patent":{"patent_number":"US-8502321","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2011-03-22T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A semiconductor device including first and second transistors having first and second gates and first and second source/drain regions, respectively. First and second contacts are electrically connected to the first and the second source/drain regions, respectively. A width of a first bottom surface of the first contacts in a gate width direction of the first-gate is wider than a width of the first bottom surface in a gate length direction of the first-gate. Widths of a second bottom surface of the second-contact are narrower than a longitudinal direction width of the first bottom surface. A high-concentration region is formed between the first source/drain regions and the first-contact. Extending widths of an outline of the high-concentration region extending from an outline of the first bottom surface in the longitudinal direction are larger than extending widths of an outline of the high-concentration region extending from an outline thereof in the short direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A semiconductor device including first and second transistors having first and second gates and first and second source/drain regions, respectively. First and second contacts are electrically connecte","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502321","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502321","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-8502321). https://patentable.app/patents/US-8502321","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502321","json":"https://patentable.app/api/llm-context/US-8502321","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:35:12.030Z"}