{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502331","patent":{"patent_number":"US-8502331","title":"Magnetoresistive effect element, magnetic memory","assignee":null,"inventors":[],"filing_date":"2011-09-16T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["B82Y","G11C"],"num_claims":14,"abstract":"According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first magnetic layer having a magnetic film including an element selected from a first group including Tb, Gd, and Dy and an element selected from a second group including Co and Fe, a second magnetic layer including perpendicular magnetic anisotropy to the film surface and a variable magnetization direction, and a nonmagnetic layer between the first magnetic layer and the second magnetic layer. The magnetic film includes amorphous phases and crystals whose particle sizes are 0.5 nm or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive effect element, magnetic memory","description":"According to one embodiment, a magnetoresistive effect element includes a first magnetic layer including perpendicular anisotropy to a film surface and an invariable magnetization direction, the first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502331","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502331","citation_suggestion":"Patentable. \"Magnetoresistive effect element, magnetic memory\" (US-8502331). https://patentable.app/patents/US-8502331","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502331","json":"https://patentable.app/api/llm-context/US-8502331","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:07:05.307Z"}