{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502346","patent":{"patent_number":"US-8502346","title":"Monolithic IGBT and diode structure for quasi-resonant converters","assignee":null,"inventors":[],"filing_date":"2010-12-23T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor substrate wherein the channel stop region further includes a peripheral terminal of a diode corresponding with another terminal of the diode laterally opposite from the peripheral terminal disposed on an active area of the semiconductor power device. In an embodiment of this invention, the semiconductor power device is an insulated gate bipolar transistor (IGBT)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Monolithic IGBT and diode structure for quasi-resonant converters","description":"This invention discloses a semiconductor power device formed in a semiconductor substrate. The semiconductor power device further includes a channel stop region near a peripheral of the semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502346","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502346","citation_suggestion":"Patentable. \"Monolithic IGBT and diode structure for quasi-resonant converters\" (US-8502346). https://patentable.app/patents/US-8502346","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502346","json":"https://patentable.app/api/llm-context/US-8502346","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:00.276Z"}