{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502347","patent":{"patent_number":"US-8502347","title":"Bipolar junction transistor with epitaxial contacts","assignee":null,"inventors":[],"filing_date":"2012-06-25T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"Bipolar junction transistors are provided in which at least one of an emitter contact, a base contact, or a collector contact thereof is formed by epitaxially growing a doped SixGe1-x layer, wherein x is 0≦x≦1, at a temperature of less than 500° C. The doped SixGe1-x layer comprises crystalline portions located on exposed surfaces of a crystalline semiconductor substrate and non-crystalline portions that are located on exposed surfaces of a passivation layer which can be formed and patterned on the crystalline semiconductor substrate. The doped SixGe1-x layer of the present disclosure, including the non-crystalline and crystalline portions, contains from 5 atomic percent to 40 atomic percent hydrogen."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bipolar junction transistor with epitaxial contacts","description":"Bipolar junction transistors are provided in which at least one of an emitter contact, a base contact, or a collector contact thereof is formed by epitaxially growing a doped SixGe1-x layer, wherein x","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502347","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502347","citation_suggestion":"Patentable. \"Bipolar junction transistor with epitaxial contacts\" (US-8502347). https://patentable.app/patents/US-8502347","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502347","json":"https://patentable.app/api/llm-context/US-8502347","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:09:15.812Z"}