{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8502391","patent":{"patent_number":"US-8502391","title":"Semiconductor device and method of making single layer substrate with asymmetrical fibers and reduced warpage","assignee":null,"inventors":[],"filing_date":"2011-12-08T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"A semiconductor device includes a first carrier having a first resin disposed over the first carrier. A fabric is disposed over the first resin. A second resin is formed over the first resin and around the fabric to form an asymmetrical pre-impregnated (PPG) substrate. The first carrier is removed. A second carrier is provided and a first conductive layer is formed over the second carrier. A portion of the first conductive layer is removed. The first conductive layer is transferred from the second carrier to the first resin. The first conductive layer is oriented asymmetrically such that the first conductive layer is offset with respect to the fabric to minimize warpage. The second carrier is removed. A via is formed through the second resin and fabric to expose the first conductive layer. A second conductive layer formed in the via over the first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of making single layer substrate with asymmetrical fibers and reduced warpage","description":"A semiconductor device includes a first carrier having a first resin disposed over the first carrier. A fabric is disposed over the first resin. A second resin is formed over the first resin and aroun","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8502391","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8502391","citation_suggestion":"Patentable. \"Semiconductor device and method of making single layer substrate with asymmetrical fibers and reduced warpage\" (US-8502391). https://patentable.app/patents/US-8502391","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8502391","json":"https://patentable.app/api/llm-context/US-8502391","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:34:19.612Z"}