{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8503216","patent":{"patent_number":"US-8503216","title":"Resistance change type memory","assignee":null,"inventors":[],"filing_date":"2010-09-21T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"According to one embodiment, a resistance change type memory includes a memory cell and a capacitor which are provided on a semiconductor substrate. The memory cell includes a resistance change type memory and a select transistor. The resistance change type storage element changes in resistance value in accordance with data to be stored. The select transistor includes a first semiconductor region provided in the semiconductor substrate, and a gate electrode facing the side surface of the first semiconductor region via a gate insulating film. The capacitor includes a second semiconductor region provided in the semiconductor substrate, a capacitor electrode facing the side surface of the second semiconductor region, and a first capacitor insulating film provided between the second semiconductor region and the capacitor electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistance change type memory","description":"According to one embodiment, a resistance change type memory includes a memory cell and a capacitor which are provided on a semiconductor substrate. The memory cell includes a resistance change type m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8503216","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8503216","citation_suggestion":"Patentable. \"Resistance change type memory\" (US-8503216). https://patentable.app/patents/US-8503216","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8503216","json":"https://patentable.app/api/llm-context/US-8503216","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:28:40.789Z"}