{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8503218","patent":{"patent_number":"US-8503218","title":"Nonvolatile memory device using resistance material and memory system including the nonvolatile memory device","assignee":null,"inventors":[],"filing_date":"2011-06-08T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":12,"abstract":"A nonvolatile memory device includes: a memory array including a plurality of memory banks which are arranged in a first direction; a write global bit line and a read global bit line extending in the first direction to be shared by the memory banks; a write circuit connected to the write global bit line and disposed on a first side of the memory array; and a read circuit connected to the read global bit line and disposed on a second side of the memory array opposite the first side of the memory array, wherein each of the memory banks extends in a second direction different from the first direction and comprises a plurality of nonvolatile memory cells, each of the nonvolatile memory cells having a variable resistive element whose resistance value varies according to data stored therein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device using resistance material and memory system including the nonvolatile memory device","description":"A nonvolatile memory device includes: a memory array including a plurality of memory banks which are arranged in a first direction; a write global bit line and a read global bit line extending in the ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8503218","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8503218","citation_suggestion":"Patentable. \"Nonvolatile memory device using resistance material and memory system including the nonvolatile memory device\" (US-8503218). https://patentable.app/patents/US-8503218","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8503218","json":"https://patentable.app/api/llm-context/US-8503218","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:21:09.071Z"}