{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8504962","patent":{"patent_number":"US-8504962","title":"Through-silicon via admittance extraction","assignee":null,"inventors":[],"filing_date":"2012-06-18T00:00:00.000Z","publication_date":"2013-08-06T00:00:00.000Z","cpc_codes":["G06F","G06F","G06F"],"num_claims":20,"abstract":"Aspects of the invention relate to techniques for extracting admittance values associated with through-silicon vias in an integrated circuit system. A function fitting process is performed to generate parameters of a representation for electro-quasi-static potential Green's functions at a plurality of frequencies of interest based on integrated circuit manufacturing process information. Based on the generated parameters, a set of electric potential basis functions, a set of electric displacement basis functions and layout information for a layout design of interest, matrix elements of a matrix for each frequency in the plurality of frequencies of interest may be computed. The matrix is a part of a linear system that formulates a relationship of electric displacement fields and electric potentials in various regions associated with through-silicon vias in the layout design. Based on the matrix, admittance values associated with the through-silicon vias are computed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Through-silicon via admittance extraction","description":"Aspects of the invention relate to techniques for extracting admittance values associated with through-silicon vias in an integrated circuit system. A function fitting process is performed to generate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8504962","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8504962","citation_suggestion":"Patentable. \"Through-silicon via admittance extraction\" (US-8504962). https://patentable.app/patents/US-8504962","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8504962","json":"https://patentable.app/api/llm-context/US-8504962","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:34:17.459Z"}