{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507298","patent":{"patent_number":"US-8507298","title":"Patterned implant of a dielectric layer","assignee":null,"inventors":[],"filing_date":"2011-12-02T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO2 or other materials, may be part of a solar cell or other device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Patterned implant of a dielectric layer","description":"At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507298","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507298","citation_suggestion":"Patentable. \"Patterned implant of a dielectric layer\" (US-8507298). https://patentable.app/patents/US-8507298","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507298","json":"https://patentable.app/api/llm-context/US-8507298","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:30:49.304Z"}