{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507327","patent":{"patent_number":"US-8507327","title":"Semiconductor device manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2009-05-13T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Cutting work is performed on an n-semiconductor substrate (1) with an inverted trapezoid-shaped dicing blade to form grooves to be a second side walls (7). Bottom portions of the grooves are contacted with a p-diffusion layer (4) which is formed on a first principal plane (2) (front face) of the n-semiconductor substrate (1), so that the p-diffusion layer (4) is not cut. Then in the second side walls (7), a p-isolation layer (9) connected to a p-collector layer (8) and the p-diffusion layer (4) is formed. Since the p-diffusion layer (4) is not cut, a glass support substrate for supporting a wafer, and expensive adhesive, are not required, and therefore the p-isolation layer (4) can be formed at low cost."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device manufacturing method thereof","description":"Cutting work is performed on an n-semiconductor substrate (1) with an inverted trapezoid-shaped dicing blade to form grooves to be a second side walls (7). Bottom portions of the grooves are contacted","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507327","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507327","citation_suggestion":"Patentable. \"Semiconductor device manufacturing method thereof\" (US-8507327). https://patentable.app/patents/US-8507327","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507327","json":"https://patentable.app/api/llm-context/US-8507327","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:34:17.611Z"}