{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507338","patent":{"patent_number":"US-8507338","title":"Semiconductor structure and fabricating method thereof","assignee":null,"inventors":[],"filing_date":"2011-08-08T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":8,"abstract":"A fabricating method of semiconductor structure is provided. First, a substrate with a dielectric layer formed thereon is provided. The dielectric layer has a first opening and a second opening exposing a portion of the substrate. Further, a gate dielectric layer including a high-k dielectric layer and a barrier layer stacked thereon had been formed on the bottoms of the first opening and the second opening. Next, a sacrificial layer is formed on the portion of the gate dielectric layer within the second opening. Next, a first work function metal layer is formed to cover the portion of the gate dielectric layer within the first opening and the sacrificial layer. Then, the portion of the first work function metal layer and the sacrificial layer within the second opening are removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabricating method thereof","description":"A fabricating method of semiconductor structure is provided. First, a substrate with a dielectric layer formed thereon is provided. The dielectric layer has a first opening and a second opening exposi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507338","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507338","citation_suggestion":"Patentable. \"Semiconductor structure and fabricating method thereof\" (US-8507338). https://patentable.app/patents/US-8507338","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507338","json":"https://patentable.app/api/llm-context/US-8507338","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:54:48.893Z"}