{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507352","patent":{"patent_number":"US-8507352","title":"Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode","assignee":null,"inventors":[],"filing_date":"2009-11-30T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for forming a collector layer are implanted to the second surface using a mask that has an opening at a portion where the collector layer will be formed. An oxide layer is formed by enhanced-oxidizing the collector layer. First conductivity type impurities for forming a first conductivity type layer are implanted to the second surface using the oxide layer as a mask. A support base is attached to the second surface and a thickness of the semiconductor substrate is reduced from the first surface. An element part including a base region, an emitter region, a plurality of trenches, a gate insulating layer, a gate electrode, and a first electrode is formed on the first surface of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode","description":"In a method of manufacturing a semiconductor device, a semiconductor substrate of a first conductivity type having first and second surfaces is prepared. Second conductivity type impurities for formin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507352","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507352","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode\" (US-8507352). https://patentable.app/patents/US-8507352","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507352","json":"https://patentable.app/api/llm-context/US-8507352","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:06:43.607Z"}