{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507356","patent":{"patent_number":"US-8507356","title":"Formation of wells utilizing masks in manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2011-11-16T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor device manufacturing method includes forming a first mask, having a first opening to implant ion into semiconductor substrate and being used to form first layer well, on semiconductor substrate; forming first-layer well having first and second regions by implanting first ion into semiconductor substrate using first mask; forming second mask, having second opening to implant ion into semiconductor substrate and being used to form second layer well, on semiconductor substrate; and forming second-layer well below first layer well by implanting second ion into semiconductor substrate using second mask. First region is formed closer to an edge of first-layer well than second region. Upon implanting first ion, first ion deflected by first inner wall of first mask is supplied to first region. Upon implanting second ion, second ion deflected by second inner wall of second mask is supplied to second region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Formation of wells utilizing masks in manufacturing semiconductor device","description":"Semiconductor device manufacturing method includes forming a first mask, having a first opening to implant ion into semiconductor substrate and being used to form first layer well, on semiconductor su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507356","citation_suggestion":"Patentable. \"Formation of wells utilizing masks in manufacturing semiconductor device\" (US-8507356). https://patentable.app/patents/US-8507356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507356","json":"https://patentable.app/api/llm-context/US-8507356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:44:43.218Z"}