{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507365","patent":{"patent_number":"US-8507365","title":"Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates","assignee":null,"inventors":[],"filing_date":"2009-12-21T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":34,"abstract":"Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattice parameter (a). The method further includes growing a crystalline semiconductor layer on the crystalline substrate surface by coincident site lattice matched epitaxy, without any buffer layer between the crystalline semiconductor layer and the crystalline surface of the substrate. The crystalline semiconductor layer will be prepared to have a lattice parameter (a′) that is related to the substrate lattice parameter (a). The lattice parameter (a′) maybe related to the lattice parameter (a) by a scaling factor derived from a geometric relationship between the respective crystal lattices."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates","description":"Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a substrate having a crystalline surface with a known lattic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507365","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507365","citation_suggestion":"Patentable. \"Growth of coincident site lattice matched semiconductor layers and devices on crystalline substrates\" (US-8507365). https://patentable.app/patents/US-8507365","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507365","json":"https://patentable.app/api/llm-context/US-8507365","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T12:44:13.844Z"}