{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507380","patent":{"patent_number":"US-8507380","title":"Methods of forming contact openings and methods of increasing contact area in only one of X and Y axes in the fabrication of integrated circuitry","assignee":null,"inventors":[],"filing_date":"2010-06-15T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":32,"abstract":"A method of forming contact openings in the fabrication of integrated circuitry includes forming a mask which includes at least one of photoresist and amorphous carbon received over a plurality of spaced conductive line constructions. The conductive line constructions include insulative caps and insulative sidewalls. The mask includes a plurality of spaced lines and trench spaces between adjacent of the spaced lines. The spaced lines and the trench spaces angle relative to the conductive line constructions. The trench spaces are received over node locations which are received between adjacent of the conductive line constructions. The at least one of photoresist and amorphous carbon is treated with a plasma to reduce lateral width of the spaced lines and to increase lateral width of the trench spaces. After the treating, contact openings are etched to the node locations selectively relative to the insulative caps and the insulative sidewalls."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming contact openings and methods of increasing contact area in only one of X and Y axes in the fabrication of integrated circuitry","description":"A method of forming contact openings in the fabrication of integrated circuitry includes forming a mask which includes at least one of photoresist and amorphous carbon received over a plurality of spa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507380","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507380","citation_suggestion":"Patentable. \"Methods of forming contact openings and methods of increasing contact area in only one of X and Y axes in the fabrication of integrated circuitry\" (US-8507380). https://patentable.app/patents/US-8507380","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507380","json":"https://patentable.app/api/llm-context/US-8507380","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:56:36.477Z"}