{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507892","patent":{"patent_number":"US-8507892","title":"Omega shaped nanowire tunnel field effect transistors","assignee":null,"inventors":[],"filing_date":"2012-02-14T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L"],"num_claims":7,"abstract":"A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a dielectric layer, forming a gate structure on the dielectric layer of the nanowire, forming a first protective spacer on portions of the nanowire, implanting ions in a first portion of the exposed nanowire and the first pad region, implanting in the dielectric layer of a second portion of the exposed nanowire and the second pad region, removing the dielectric layer from the second pad region and the second portion, removing the core portion of the second portion of the exposed nanowire to form a cavity, and epitaxially growing a doped semiconductor material in the cavity to connect the exposed cross sections of the nanowire to the second pad region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Omega shaped nanowire tunnel field effect transistors","description":"A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507892","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507892","citation_suggestion":"Patentable. \"Omega shaped nanowire tunnel field effect transistors\" (US-8507892). https://patentable.app/patents/US-8507892","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507892","json":"https://patentable.app/api/llm-context/US-8507892","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:36:00.589Z"}