{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507915","patent":{"patent_number":"US-8507915","title":"Low resistance embedded strap for a trench capacitor","assignee":null,"inventors":[],"filing_date":"2011-11-30T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A trench is formed in a semiconductor substrate, and is filled with a node dielectric layer and at least one conductive material fill portion that functions as an inner electrode. The at least one conductive material fill portion includes a doped polycrystalline semiconductor fill portion. A gate stack for an access transistor is formed on the semiconductor substrate, and a gate spacer is formed around the gate stack. A source/drain trench is formed between an outer sidewall of the gate spacer and a sidewall of the doped polycrystalline semiconductor fill portion. An epitaxial source region and a polycrystalline semiconductor material portion are simultaneously formed by a selective epitaxy process such that the epitaxial source region and the polycrystalline semiconductor material portion contact each other without a gap therebetween. The polycrystalline semiconductor material portion provides a robust low resistance conductive path between the source region and the inner electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low resistance embedded strap for a trench capacitor","description":"A trench is formed in a semiconductor substrate, and is filled with a node dielectric layer and at least one conductive material fill portion that functions as an inner electrode. The at least one con","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507915","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507915","citation_suggestion":"Patentable. \"Low resistance embedded strap for a trench capacitor\" (US-8507915). https://patentable.app/patents/US-8507915","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507915","json":"https://patentable.app/api/llm-context/US-8507915","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:20:12.559Z"}