{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-8507920","patent":{"patent_number":"US-8507920","title":"Semiconductor structure and method of forming the same","assignee":null,"inventors":[],"filing_date":"2011-07-11T00:00:00.000Z","publication_date":"2013-08-13T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An embodiment of the disclosure includes a semiconductor structure. The semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. An interface is defined between the first III-V compound layer and the second III-V compound layer. A gate is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on opposite side of the gate. Each of the source feature and the drain feature includes a corresponding metal feature at least partially embedded in the second III-V compound layer. A corresponding intermetallic compound underlies each metal feature. Each intermetallic compound contacts a carrier channel located at the interface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method of forming the same","description":"An embodiment of the disclosure includes a semiconductor structure. The semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V comp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-8507920","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-8507920","citation_suggestion":"Patentable. \"Semiconductor structure and method of forming the same\" (US-8507920). https://patentable.app/patents/US-8507920","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-8507920","json":"https://patentable.app/api/llm-context/US-8507920","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:49:53.862Z"}